RTS Noise in Si MOSFETs and GaN/AlGaN HFETs

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU73784" target="_blank" >RIV/00216305:26220/08:PU73784 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

RTS Noise in Si MOSFETs and GaN/AlGaN HFETs

Original language description

Low frequency noise of Si n-MOSFET and GaN/AlGaN HFET devices was measured in 10 uHz to 100 kHz range, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method in 1 ms to 100 s windows and noise spectral density of crossing events was found almost constant in the 10-5 to 103 Hz frequency range in all samples. This indicates that there is no 1/f fluctuation of crossing rate given by trap characteristics, although charge carrier transport mechanismsgive rise to quite different 1/f noise levels in Si and GaN devices. Statistical analysis of carrier capture and emission events duration revealed departure from exponential distribution in some samples, but any correlation among successive pulses wasn'tobvious.

Czech name

Šum RTS v Si MOSFET a GaN/AlGaN HFET

Czech description

Low frequency noise of Si n-MOSFET and GaN/AlGaN HFET devices was measured in 10 uHz to 100 kHz range, given by 1/f noise and RTS noise components. RTS noise voltage signal was analysed by means of zero cross method in 1 ms to 100 s windows and noise spectral density of crossing events was found almost constant in the 10-5 to 103 Hz frequency range in all samples. This indicates that there is no 1/f fluctuation of crossing rate given by trap characteristics, although charge carrier transport mechanismsgive rise to quite different 1/f noise levels in Si and GaN devices. Statistical analysis of carrier capture and emission events duration revealed departure from exponential distribution in some samples, but any correlation among successive pulses wasn'tobvious.

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Noise sources in semiconductor materials and devices</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

WSEAS Transactions on Electronics

ISSN

1109-9445

e-ISSN

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Volume of the periodical

4

Issue of the periodical within the volume

9

Country of publishing house

US - UNITED STATES

Number of pages

5

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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