Holding voltage adjustable Silicon Controlled Rectifier

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU74262" target="_blank" >RIV/00216305:26220/08:PU74262 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Holding voltage adjustable Silicon Controlled Rectifier
Original language description
Holding Voltage Adjustable Silicon Controlled Rectifier (HVASCR) is SCR with possibility to tune holding voltage. The HVASCR structure forms good ESD (electrostatic discharge) protection. Application of such structures provides ICs robustness against ESD. In this paper a new tunable SCR based structure is introduced. TCAD simulation results were made in CMOS and structure samples were manufactured in BiCMOS 1.5um. According to the results HVASCR structure is convenient for low voltage applications in CMOS process but even for higher holding voltages in BiCMOS process. In ESD protections design is HVASCR structure useful as supply clamp or primary ESD protections. It has very big robustness against ESD stress. This is good reason along with holding voltage adjustability to use HVASCRs commercially.
Czech name
Tyristor s laditelným držícím napětím. (HVASCR)
Czech description
HVASCR je tyristorová struktura umožňující ladění držícího napětí bez použití MOS tranzistoru pralelně s tyristorem. Ladění se provádí změnou rozměrů geometrické masky pro jednotlivé difúze. Struktura je vhodná pro návrh ESD ochran i integrovaných obvodech.

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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