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Noise Reliability Indicators In SMT Chip Resistors

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU74379" target="_blank" >RIV/00216305:26220/08:PU74379 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Noise Reliability Indicators In SMT Chip Resistors

  • Original language description

    The possible exploitation of low frequency noise and non-linearity measurements for thin film resistor characterisation is presented. The low frequency noise spectrum is 1/fa type and it is due to two sources: fundamental quantum 1/f noise and excess 1/fnoise. It is fre-quently observed that excess 1/f noise is related to the microscopic sample structure and the manufacturing technology. The non-linearity of A-V characteristic is proportional to the dis-tortion of pure harmonic signal applied to the measured sample. Carrier transport in thin re-sistive layers is not strictly linear and the third harmonic voltage is proportional to the third power of electric field intensity or current density.

  • Czech name

    Noise Reliability Indicators In SMT Chip Resistors

  • Czech description

    The possible exploitation of low frequency noise and non-linearity measurements for thin film resistor characterisation is presented. The low frequency noise spectrum is 1/fa type and it is due to two sources: fundamental quantum 1/f noise and excess 1/fnoise. It is fre-quently observed that excess 1/f noise is related to the microscopic sample structure and the manufacturing technology. The non-linearity of A-V characteristic is proportional to the dis-tortion of pure harmonic signal applied to the measured sample. Carrier transport in thin re-sistive layers is not strictly linear and the third harmonic voltage is proportional to the third power of electric field intensity or current density.

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA102%2F06%2F0866" target="_blank" >GA102/06/0866: Nonlinear electroultrasonic spectroscopy of solids</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2008

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Student EEICT 2008 Proceedings Of The 14th Conference

  • ISBN

    978-80-214-3617-6

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

  • Publisher name

    Ing. Zdeněk Novotný CSc.

  • Place of publication

    Ondráčkova 105 Brno

  • Event location

    FEKT VUT v Brně

  • Event date

    Apr 24, 2008

  • Type of event by nationality

    CST - Celostátní akce

  • UT code for WoS article