Scaling of RTS Noise in MOSFETs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU75520" target="_blank" >RIV/00216305:26220/08:PU75520 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Scaling of RTS Noise in MOSFETs
Original language description
Low frequency noise of NMOS and PMOS field effect transistors was measured in wide temperature range as a function of applied electric field intensity in longitudinal and perpendicular direction and dependence of RTS noise amplitude on channel and gate biasing was analysed. The influence of sample geometry on 1/f noise and RTS noise was examined for gate lengths in the 0.14um to 15um range. Relative amplitude of noise given by number of carriers under the gate and noise reduction by modified gate oxidation is discussed.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of IMAPS CS Int. Conf. Electronic Devices and Systems 2008
ISBN
978-80-214-3717-3
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
VUT v Brně
Place of publication
Brno
Event location
Brno
Event date
Sep 10, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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