Scaling of RTS Noise in MOSFETs

Result code in IS VaVaI

RIV/00216305:26220/08:PU75520 - isvavai.cz

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Scaling of RTS Noise in MOSFETs

Original language description

Low frequency noise of NMOS and PMOS field effect transistors was measured in wide temperature range as a function of applied electric field intensity in longitudinal and perpendicular direction and dependence of RTS noise amplitude on channel and gate biasing was analysed. The influence of sample geometry on 1/f noise and RTS noise was examined for gate lengths in the 0.14um to 15um range. Relative amplitude of noise given by number of carriers under the gate and noise reduction by modified gate oxidation is discussed.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of IMAPS CS Int. Conf. Electronic Devices and Systems 2008

ISBN

978-80-214-3717-3

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

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Publisher name

VUT v Brně

Place of publication

Brno

Event location

Brno

Event date

Sep 10, 2008

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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