RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU81971" target="_blank" >RIV/00216305:26220/09:PU81971 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position

Original language description

Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. We will give a model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the draincontact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it h

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastic Phenomena in MIS and MIM Semiconductor Structures</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

AIP conference proceedings

ISSN

0094-243X

e-ISSN

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Volume of the periodical

1129

Issue of the periodical within the volume

1

Country of publishing house

US - UNITED STATES

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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