Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors: Lateral Electron Density Distribution and Active Trap Position
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU98589" target="_blank" >RIV/00216305:26220/12:PU98589 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Noise in Submicron Metal-Oxide-Semiconductor Field Effect Transistors: Lateral Electron Density Distribution and Active Trap Position
Original language description
Experiments were carried out for the n-channel devices, processed in a 0.3 um spacer less Complementary Metal?Oxide?Semiconductor technology. Random-Telegraph-Signal measurements were performed for the constant gate voltage. It is supposed that electronconcentration in the channel decreases from the source to the drain contact. Lateral component of the electric field is inhomogeneous in the channel and it has a minimum value near the source and reaching the maximum value near the drain electrode. Draincurrent is given by two components ? diffusion and drift ones. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. The model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position is given. From the dependence of the capture time constant tc on the drain current could be calculated x-coordinate of the trap position.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Japanese Journal of Applied Physics
ISSN
0021-4922
e-ISSN
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Volume of the periodical
2012 (51)
Issue of the periodical within the volume
1
Country of publishing house
JP - JAPAN
Number of pages
5
Pages from-to
"024105-1"-"024105-5"
UT code for WoS article
000300627200042
EID of the result in the Scopus database
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