Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU88547" target="_blank" >RIV/00216305:26220/10:PU88547 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Development of a New Technique for the Study of a Single Trap in Insulators for Electronic Components
Original language description
This paper presents temperature measurement of electron density for electronic components. Our department has a cryogenic laboratory for measurement at the different temperature from 10 to 500 K. We perform experiments and calculations VA (volt-ampere) characteristics and RTS (Random Telegraph Signal) noise for submicron technology with a channel length less than 300 nm. The electron temperature is then higher than the lattice one and the field dependent electron mobility must be considered. The capturetime constant increases with increasing drain current. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the cha
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2010 Annual Report Conference on Electrical Insulation and Dielectric Phenomena Volume 1
ISBN
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ISSN
0084-9162
e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE
Place of publication
Clearance Center 222 Rosewood Drive Danvers MA 0
Event location
West Lafayette, IN
Event date
Oct 17, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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