Behaviour of silicon nanostructure in electric field

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU84759" target="_blank" >RIV/00216305:26220/09:PU84759 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Behaviour of silicon nanostructure in electric field
Original language description
Paper presents a numerical analysis of quantum states and probability function of a Si nanostructure in a dielectric medium under varying bias. The position of probability function peak xp is traced and the bias, under which it abandons the structure (emission or discharging bias), is determined. Variations of the ground state energy with the bias is also examined. The Poisson and Schrödinger 1D models of COMSOL Multiphysics program are employed. The results would help understanding the electronic properties and behavior of ultrascaled memory devices utilizing semiconducting quantum dots and single nanocrystals, to mention only one application.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F07%2F0113" target="_blank" >GA102/07/0113: Noise as Diagnostic Tool for Schottky and Could Electron Emission Cathodes</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of Physics of Materials 09, V. Lisý, D. Olčák (Eds).,
ISBN
978-80-8086-122-3
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Faculty of Electrical Engineering and Informatics, Technical University of Košice,
Place of publication
Košice, SK
Event location
Košice
Event date
Oct 14, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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