Silicon-silicon dioxide nanostructure in electrostatic field

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU88023" target="_blank" >RIV/00216305:26220/10:PU88023 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Silicon-silicon dioxide nanostructure in electrostatic field

Original language description

Paper presents a numerical analysis of quantum states and probability function of a Si-SiO2 nanostructure in varying electrostatic field. The position of probability function peak is traced, and bias, under which it abandons the structure is determined.Variation of the ground state energy with the bias is also examined. The Poisson-Schrodinger model of Comsol Multiphysics program is devised and employed. The results would help understanding the electronic properties and behavior ultrascaled Si-SiO2 memory devices utilizing semiconducting quantum dots and Si single nanocrystals, to mention only one application.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F07%2F0113" target="_blank" >GA102/07/0113: Noise as Diagnostic Tool for Schottky and Could Electron Emission Cathodes</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2010

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Acta Electrotechnica et Informatica

ISSN

1335-8243

e-ISSN

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Volume of the periodical

10

Issue of the periodical within the volume

3

Country of publishing house

SK - SLOVAKIA

Number of pages

4

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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