ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU86945" target="_blank" >RIV/00216305:26220/10:PU86945 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS
Original language description
Tantalum pent oxide thin films are used as dielectric layers for capacitors, gate insulating layers for MOSFETS, RF MEMS switches, etc. Charge carriers transport mechanism and charge storage in insulating layer are important parameters for the application in these devices. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 4x10-8A/cm2 for the electric field 2 MV/cm. Dominant mechanism of charge carriers' transport is ohmic conduction for the low electric field, while Pool-Frenkel mechanism become dominant for electric field in the range 1 to 2.5 MV/cm. Tunneling current component is comparable with Pool-Frenkel current component or become dominant for electric field higher than 2MV/cm at temperature lower then 200 K.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastic Phenomena in MIS and MIM Semiconductor Structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
PROCEEEDINGS OF THE 16TH CONFERENCE - STUDENT EEICT 2010
ISBN
978-80-214-4079-1
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
NOVPRESS s.r.o.
Place of publication
nam. Republiky 15 614 00 Brno
Event location
FEKT VUT v Brně
Event date
Apr 29, 2010
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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