Activation energy of RTS noise
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU88138" target="_blank" >RIV/00216305:26220/10:PU88138 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Activation energy of RTS noise
Original language description
RTS (Random Telegraph Signal) was measured in a wide range of silicon MOSFETs with various dimensions and its dependence on biasing conditions and temperature analysed in order to obtain new information regarding production technology. From the time dependence of RTS noise voltage the mean time of charge carriers capture and emission by traps close to the Si-SiO2 interface was determined as a function of applied gate and drain voltage and then several important trap parameters, such as trap cross-section, activation energy and position in the channel could be estimated.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings EDS '10 IMAPS CS International Conference
ISBN
978-80-214-4138-5
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
VUT
Place of publication
Brno
Event location
Brno
Event date
Sep 1, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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