Activation Energy of RTS Noise

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU90163" target="_blank" >RIV/00216305:26220/11:PU90163 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Activation Energy of RTS Noise

Original language description

Low frequency noise was measured in silicon MOSFET and GaN and InGaAs based HFET devices with special emphasis on the RTS noise. The RTS (Random Telegraph Signal) dependence on the biasing conditions and temperature was analyzed in order to obtain new information regarding production technology. From the time dependence of the RTS noise voltage the mean time of charge carriers capture and emission by traps in the gate oxide layer was determined as a function of applied gate and drain voltage or electronconcentration and then several important trap parameters, such as activation energy and position in the channel could be estimated.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Radioengineering

ISSN

1210-2512

e-ISSN

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Volume of the periodical

20

Issue of the periodical within the volume

1

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

6

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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