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On the determination of silicon solar cell properties based on capacitance characteristics measurement

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU89111" target="_blank" >RIV/00216305:26220/10:PU89111 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    On the determination of silicon solar cell properties based on capacitance characteristics measurement

  • Original language description

    Diffusion technology based pn junction silicon solar cells are currently the most widespread solar cell types. Their extremely large junctions contain lots of defect regions which deteriorate the properties of the whole solar cells. This paper analyses in detail the issue of measuring the reverse-biased pn junction capacity (the barrier capacity) and its applications in non-destructive diagnostics. Relations between the specimen UI curves and noise generated in consequence of local avalanche breakdowns(microplasma noise) will be shown, too. The capacitance versus reverse voltage was measured using the "Auto balancing bridge method", which proved to serve the purpose very well. From experimental data we calculate electric field intensity and subsequently the properties of local defect is possible to determine.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP102%2F10%2F2013" target="_blank" >GAP102/10/2013: Fluctuation processes in PN junctions of solar cells</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2010

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Electronic Devices and Systems, IMAPS CS International Conference 2010

  • ISBN

    978-80-214-4138-5

  • ISSN

  • e-ISSN

  • Number of pages

    7

  • Pages from-to

  • Publisher name

    Novpress

  • Place of publication

    Brno

  • Event location

    Brno

  • Event date

    Sep 1, 2010

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article