Narrow-band noise as a tool for diagnostics of solar cells pn junctions

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU89295" target="_blank" >RIV/00216305:26220/10:PU89295 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Narrow-band noise as a tool for diagnostics of solar cells pn junctions
Original language description
Presented paper deals with noise diagnostics of defects in monocrystalline silicon solar cells PN junctions. Localized regions featuring increased concentration of donor or acceptor impurities, other element admixtures or other defects which cause the PNjunction reverse breakdown voltage to be reduced. When a high electric field is applied to this PN junction, local breakdowns arise in micro-sized regions, which in turn can lead to the deterioration in quality or destruction of the PN junction. The useful tool for diagnostics of local defects in PN junctions is the reverse-biased PN junction narrow-band RMS noise current vs. reverse voltage measuring. The set of crystalline silicon solar cells with different structure was studied by this noise diagnostic method.
Czech name
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Czech description
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Project
<a href="/en/project/GAP102%2F10%2F2013" target="_blank" >GAP102/10/2013: Fluctuation processes in PN junctions of solar cells</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2010 9th International Conference on Environment end Electrical engineerong
ISBN
978-1-4244-5374-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Reprotechnika Wroclaw
Place of publication
Wroclaw
Event location
Praha
Event date
May 16, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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