RELIABILITY OF PASSIVE ELECTRONIC DEVICES: FAILURE MECHANISMS AND TESTING

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU89312" target="_blank" >RIV/00216305:26220/10:PU89312 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
RELIABILITY OF PASSIVE ELECTRONIC DEVICES: FAILURE MECHANISMS AND TESTING
Original language description
Non-destructive methods for the quality characterization and reliability prediction of passive electronic devices are based on the VA characteristics, the nonlinearity index (NLI), electronic noise spectroscopy, and electro-ultrasonic spectroscopy. Leakage current value and its dependence on ageing time for the fixed temperature and applied voltage are frequently used as the reliability indicators for tantalum and niobium capacitors. It is shown that the self-healing processes can regenerate capacitor structure and then both leakage current and noise decrease in affected samples. The frequency dependence of the noise spectral density in mHz region gives the information on slow irreversible processes. Acoustic emission and partial discharges signals canbe used to localise the defect position in the foil capacitors. A noise and nonlinearity of resistors are used for detecting imperfections and abnormalities. It is shown that electro-ultrasonic spectroscopy intermodulation component is m
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastic Phenomena in MIS and MIM Semiconductor Structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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