Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU100162" target="_blank" >RIV/00216305:26220/12:PU100162 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Low Noise as a Diagnostic Tool for GaSb based Laser Diodes Prepared by Molecular Beam Epitaxy
Original language description
Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE(Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.
Czech name
—
Czech description
—
Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/ED0014%2F01%2F01" target="_blank" >ED0014/01/01: Research and Technology Centre of Renewable Energy Sources</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
International Conference on Microelectronics-MIEL
ISSN
2159-1660
e-ISSN
—
Volume of the periodical
2012
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
343-346
UT code for WoS article
000309119600073
EID of the result in the Scopus database
—