Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00450842" target="_blank" >RIV/68378271:_____/15:00450842 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.2478/jee-2015-0036" target="_blank" >http://dx.doi.org/10.2478/jee-2015-0036</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.2478/jee-2015-0036" target="_blank" >10.2478/jee-2015-0036</a>

Result language
angličtina
Original language name
Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy
Original language description
The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE (vertical cavity surface emitting). Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE (molecular beam epitaxy) technology. The results demonstrate that the lasers prepared by new MBE technology have higher quality than the samples prepared by using the classic MBE technology.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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