Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00384214" target="_blank" >RIV/68378271:_____/12:00384214 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Low noise as a diagnostic tool for GaSb based laser diodes prepared by Molecular Beam Epitaxy
Original language description
Trasnport and noise characteristics of forward biased semiconductor lasers diodes GaSb based VCSE (Vertical Cavity Surface Emitting) laser were prepared by MBE (Molecular Beam Epitaxy) were measured in order to evaluate the new MBE technology.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
28th International Conference on microelectronics
ISBN
978-1-4673-0238-8
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
343-346
Publisher name
IEEE
Place of publication
New York
Event location
Niš
Event date
May 13, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000309119600073