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Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101133" target="_blank" >RIV/00216305:26220/12:PU101133 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

  • Original language description

    This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I ? t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is for

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/MEB091129" target="_blank" >MEB091129: Investigation of the noise of thick-film pressure sensors</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    MIDEM Society for Microelectronic, Electronic Components and Materials - Conference 2012 Proceedings

  • ISBN

    978-961-92933-2-4

  • ISSN

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

    145-150

  • Publisher name

    MIDEM

  • Place of publication

    Slovinsko

  • Event location

    Otočec Slovenia

  • Event date

    Sep 19, 2012

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article