Charge Carrier Transport in NbO and Ta Capacitors in Temperature Range 100 to 300 K

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU63880" target="_blank" >RIV/00216305:26220/06:PU63880 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Charge Carrier Transport in NbO and Ta Capacitors in Temperature Range 100 to 300 K

Original language description

An analysis of charge carrier transport in NbO and Ta capacitors was performed at temperature range 100 to 300 K. VA characteristics in normal and reverse mode have been measured and characteristics important for formulation of MIS structure have been obtained to prove that in reverse mode a threshold voltage exists at which a potential barrier in Nb2O5 and Ta2O5 dielectrics depends on temperature. If the capacitor is polarized in the "normal mode", (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Current components dependent on Boltzmann distribution of charge carriers decrease for decreasing temperature. It concerns to Schottky, Poole-Frenkel and ohmic current components. For temperature lower than 200K these components are lower than the tunneling one and VA characteristic is described by charge carrier tunneling only. Threshold voltage is dependent on barrier at Nb2O5 - MnO2 interface for normal mode and NbO - Nb2O

Czech name

Transport náboje v tantalových a niob-oxidových kondentátorech v rozsahu teplot 100 až 300 K

Czech description

An analysis of charge carrier transport in NbO and Ta capacitors was performed at temperature range 100 to 300 K. VA characteristics in normal and reverse mode have been measured and characteristics important for formulation of MIS structure have been obtained to prove that in reverse mode a threshold voltage exists at which a potential barrier in Nb2O5 and Ta2O5 dielectrics depends on temperature. If the capacitor is polarized in the "normal mode", (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Current components dependent on Boltzmann distribution of charge carriers decrease for decreasing temperature. It concerns to Schottky, Poole-Frenkel and ohmic current components. For temperature lower than 200K these components are lower than the tunneling one and VA characteristic is described by charge carrier tunneling only. Threshold voltage is dependent on barrier at Nb2O5 - MnO2 interface for normal mode and NbO - Nb2O

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Noise sources in semiconductor materials and devices</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2006

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceeding of CARTS Europe 2006 - 20th annual passive components symposium

ISBN

0-7908-0110-8

ISSN

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e-ISSN

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Number of pages

10

Pages from-to

189-198

Publisher name

Electronic Components, Assemblies and Materials Association

Place of publication

Bad Homburg, Německo

Event location

Bad Homburg

Event date

Sep 25, 2006

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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