Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU95271" target="_blank" >RIV/00216305:26220/11:PU95271 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors
Original language description
Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature rangefrom 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterize
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastic Phenomena in MIS and MIM Semiconductor Structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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