Leakage Current and Noise of High Voltage NbO and Ta Capacitors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78579" target="_blank" >RIV/00216305:26220/08:PU78579 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Leakage Current and Noise of High Voltage NbO and Ta Capacitors
Original language description
An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. VA characteristics, leakage current noise and restoring voltage in normal and reverse mode at room and elevated temperature have been used to reveal the non stability sources. We have analyzed the effect of localized energy states in insulating layer on the leakage current and electric charge distribution. The electrical conduction can occur by thermally activatedhopping and tunneling between deep impurity states. When an electron moves from one localized state to another it will exchange energy with a phonons. The charge carrier's mobility has a thermally activated nature and its value is of the order of 1 cm2/Vs. Capacitor restoring voltage analysis reveals that in normal mode charge stored in insulating layer is proportional to applied voltage. Proportionality constant depends on insulating layer characteristics and on anodic oxidation paramet
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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