Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87769" target="_blank" >RIV/00216305:26220/10:PU87769 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Tantalum and Niobium Oxide Capacitors: Leakage curent, Anodic Oxidation and Reliability
Original language description
An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. It is shown that the conduction process cannot be electrode limited, even if interface states or, other interfaceirregularities are postulated to exist. The conductivity mechanism is considered to be bulk limited and then anodic oxidation technology determines the current transport in capacitor both in normal and reverse modes. The dominant electric current transport mechanisms are Ohmic, Poole-Frenkel conduction, over barrier transport and tunneling. Value of the leakage current depends on the insulation layer structure, its electron affinity and the electrodes work functions. From anodizing experiment it follows, that with increasing anodizing current density the electron affinity increases and thus the potential barrier decreases. The insulating layer electron affinity decreases with increasing anodizing voltage at constant anodizing current d
Czech name
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Czech description
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Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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