Niob-oxidové a tantalové kondenzátory - kvantové efekty v transportu náboje
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F06%3APU63879" target="_blank" >RIV/00216305:26220/06:PU63879 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
čeština
Original language name
Niobium Oxide and Tantalum Capacitors: Quantum Effects in Charge Carrier Transport
Original language description
The aim of this paper is to characterize the physical processes responsible for a quality of NbO and Ta capacitors. This method for assessment of defects in active region of NbO and Ta capacitors is based on evaluation of VA and noise characteristics andtheirs temperature dependences. For the capacitor polarized in the "normal mode", (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Insulating layer in these components has 30 to 100 nmand then they belong to nanoscale electronic devices in which quantum effects play important role. The concentration of localized energy states in insulating layer Nd = 1018 to 1019 cm-3. For such doping concentration the impurity band is created with Eimp = 10 to 20 meV. To explain the ohmic current component electrons must be considered as waves with wavelength of the order of 1 nm. The conduction can occur by thermally activated hopping in impurity band and tunneling between d
Czech name
Niobium Oxide and Tantalum Capacitors: Quantum Effects in Charge Carrier Transport
Czech description
The aim of this paper is to characterize the physical processes responsible for a quality of NbO and Ta capacitors. This method for assessment of defects in active region of NbO and Ta capacitors is based on evaluation of VA and noise characteristics andtheirs temperature dependences. For the capacitor polarized in the "normal mode", (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Insulating layer in these components has 30 to 100 nmand then they belong to nanoscale electronic devices in which quantum effects play important role. The concentration of localized energy states in insulating layer Nd = 1018 to 1019 cm-3. For such doping concentration the impurity band is created with Eimp = 10 to 20 meV. To explain the ohmic current component electrons must be considered as waves with wavelength of the order of 1 nm. The conduction can occur by thermally activated hopping in impurity band and tunneling between d
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Noise sources in semiconductor materials and devices</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings CARTS USA 2006 - The 26th Symposium for Passive Components
ISBN
0-7908-0108-6
ISSN
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e-ISSN
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Number of pages
7
Pages from-to
421-427
Publisher name
Electronic Components, Assemblies and Materials Association
Place of publication
Orlando, Florida
Event location
Orlando, Florida
Event date
Apr 3, 2006
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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