Niobium Oxide and Tantalum Capacitors: Leakage Current, Restoring Voltage and Reliability

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78582" target="_blank" >RIV/00216305:26220/08:PU78582 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Niobium Oxide and Tantalum Capacitors: Leakage Current, Restoring Voltage and Reliability

Original language description

An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. It is shown that the conduction process cannot be electrode limited, even if interface states or, other interfaceirregularities are postulated to exist. The conductivity mechanism is considered to be bulk limited and then anodic oxidation technology determines the current transport in capacitor both in normal and reverse modes. The dominant electric current transport mechanisms are Ohmic, Poole-Frenkel conduction, over barrier transport and tunneling. Value of the leakage current depends on the insulation layer structure, its electron affinity and the electrodes work functions. From anodizing experiment it follows, that with increasing anodizing current density the electron affinity increases and thus the potential barrier decreases. The insulating layer electron affinity decreases with increasing anodizing voltage at constant anodizing current d

Czech name

Niobium Oxide and Tantalum Capacitors: Leakage Current, Restoring Voltage and Reliability

Czech description

An analysis of charge carrier transport in NbO and Ta capacitors was performed to prove the stability, reliability of NbO and Ta capacitors. It is shown that the conduction process cannot be electrode limited, even if interface states or, other interfaceirregularities are postulated to exist. The conductivity mechanism is considered to be bulk limited and then anodic oxidation technology determines the current transport in capacitor both in normal and reverse modes. The dominant electric current transport mechanisms are Ohmic, Poole-Frenkel conduction, over barrier transport and tunneling. Value of the leakage current depends on the insulation layer structure, its electron affinity and the electrodes work functions. From anodizing experiment it follows, that with increasing anodizing current density the electron affinity increases and thus the potential barrier decreases. The insulating layer electron affinity decreases with increasing anodizing voltage at constant anodizing current d

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

CARTS USA 2008

ISBN

0-7908-0118-3

ISSN

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e-ISSN

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Number of pages

12

Pages from-to

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Publisher name

Neuveden

Place of publication

Neuveden

Event location

Newport Beach, CA USA

Event date

Mar 17, 2008

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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