Leakage Current and Quantum Effects in Tantalum Capacitors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU89316" target="_blank" >RIV/00216305:26220/10:PU89316 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Leakage Current and Quantum Effects in Tantalum Capacitors
Original language description
The analysis of charge carrier transport in Ta capacitors in the temperature range from 10 to 400 K was performed. The main goal of this work was to determine the potential barriers on Ta-Ta2O5 and Ta2O5-MnO2 (or conducting polymer) interfaces in the device structures Ta- Ta2O5-MnO2 (or conducting polymer) and to find possible influence on the device quality and reliability. Tantalum capacitor is a MIS structure, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. Decreasing the thickness of the insulating Ta2O5 layer below 100 nm, the classical physical models are not able to give satisfactory descriptions of charge transport mechanism, and voltage and temperature dependences of electrical current. Some quantum effects, as electron tunneling and quantum transitions of electrons from trapping centers levels to conduction band must be taken into account. The traps (oxygen vacancies, their concentration is of the order of 1018 cm-
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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