Niobium Oxide and Tantalum Capacitors: Leakage Current and M-I-S Model Parameters

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F07%3APU72008" target="_blank" >RIV/00216305:26220/07:PU72008 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Niobium Oxide and Tantalum Capacitors: Leakage Current and M-I-S Model Parameters

Original language description

The method for quality and reliability of NbO and Ta capacitors is based on assessment of defects in insulating layer. The model of the MIS structure is used to give a physical interpretation of the NbO and Ta capacitors VA and CV characteristics and theirs temperature dependences. The MIS structure consists from metallic NbO or Ta, insulating layer made from Nb2O5 or Ta2O5 and semiconductor - MnO2. For the capacitor polarized in the "normal mode", (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Insulating layer thickness in these devices has 20 to 100 nm and then these devices belong to nanoscale electronic devices in which quantum effects play important role. Insulating layer is notperfect structure and it contains oxygen vacancies and the other defects. They create deep localized states acting as donors with concentration about 1018 to 1019 cm-3. At such value of donor concentration impurity band can be created. E

Czech name

NbO a Ta kondenzátory - zbytkový proud a parametry modelu M-I-S

Czech description

The method for quality and reliability of NbO and Ta capacitors is based on assessment of defects in insulating layer. The model of the MIS structure is used to give a physical interpretation of the NbO and Ta capacitors VA and CV characteristics and theirs temperature dependences. The MIS structure consists from metallic NbO or Ta, insulating layer made from Nb2O5 or Ta2O5 and semiconductor - MnO2. For the capacitor polarized in the "normal mode", (with the NbO and Ta electrode positive), ohmic, Poole-Frenkel and tunneling are the dominant conduction mechanisms. Insulating layer thickness in these devices has 20 to 100 nm and then these devices belong to nanoscale electronic devices in which quantum effects play important role. Insulating layer is notperfect structure and it contains oxygen vacancies and the other defects. They create deep localized states acting as donors with concentration about 1018 to 1019 cm-3. At such value of donor concentration impurity band can be created. E

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

<a href="/en/project/GA102%2F05%2F2095" target="_blank" >GA102/05/2095: Noise sources in semiconductor materials and devices</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2007

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of CARTS USA 2007

ISBN

0-7908-0114-0

ISSN

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e-ISSN

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Number of pages

9

Pages from-to

337-345

Publisher name

Electronic Components, Assemblies&Materials Association

Place of publication

USA

Event location

Albuquerque, New Mexico

Event date

Mar 26, 2007

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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