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Breakdown characteristics and low frequency noise of niobium based capacitors

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU40393" target="_blank" >RIV/00216305:26220/03:PU40393 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Breakdown characteristics and low frequency noise of niobium based capacitors

  • Original language description

    New capacitor technologies based on Niobium (Nb)and Niobium Oxide (NbO) powders in conjunction with niobium pentoxide (Nb2O5) dielectric have been released recently. These technologies are based on processes nearly identical to those of conventional tantalum (Ta) capacitors. One of the key features of the NbO, in contrast to Nb and Ta, is its' high resistance to ignition. This is due to the intrinsically higher ignition energy of NbO material and higher resistance failure mode after dielectric breakdownn. This paper describes the behaviour of NbO capacitors after forced dielectric breakdown with both forward and reverse voltages applied. A low frequency analysis of the charge carrier transport mechanism has been performed on the Nb/NbO - Nb2O5 - MnO2 systems and the mechanisms governing current flow and noise sources have been determined. The ideal metal / insulator / semiconductor (MIS) structure is shown in Fig.1. This paper also reviews the basic features of these capacitor technolo

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2003

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Capacitor and Resistor Technology

  • ISSN

    0887-7491

  • e-ISSN

  • Volume of the periodical

    2003

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    7

  • Pages from-to

    53-59

  • UT code for WoS article

  • EID of the result in the Scopus database