Conductivity mechanisms and breakdown of NbO capacitors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F04%3APU47292" target="_blank" >RIV/00216305:26220/04:PU47292 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Conductivity mechanisms and breakdown of NbO capacitors

Original language description

Niobium Oxide (NbO) capacitor, has already found its place in the market as a cost effective and reliable non-burning component. The study of conductivity mechanisms has been done to prove its good stability, reliability and non-burning performance. Setof electrical measurements as VA characteristics in forward and reverse mode, voltage and frequency characteristics of capacitance, temperature or time dependence of basic parameters together with measurements of basic physical parameters enabled to proppose the theoretical model of NbO - Nb2O5 - MnO2 system. A physical model of a solid niobium oxide capacitor based on metal-insulator-semiconductor (MIS) structure is given. The MIS structure consists from metallic niobium oxide, insulating layer made from Nb2O5 and semiconductor - MnO2. The current transport in normal and reverse mode is determined by work function of niobium oxide, Nb2O5, MnO2 and band bending in interface between Nb2O5 and MnO2. The work function difference between nio

Czech name

Mechanismy vodivosti a breakdown u NbO kondenzátorů

Czech description

Niobium Oxide (NbO) capacitor, has already found its place in the market as a cost effective and reliable non-burning component. The study of conductivity mechanisms has been done to prove its good stability, reliability and non-burning performance. Setof electrical measurements as VA characteristics in forward and reverse mode, voltage and frequency characteristics of capacitance, temperature or time dependence of basic parameters together with measurements of basic physical parameters enabled to proppose the theoretical model of NbO - Nb2O5 - MnO2 system. A physical model of a solid niobium oxide capacitor based on metal-insulator-semiconductor (MIS) structure is given. The MIS structure consists from metallic niobium oxide, insulating layer made from Nb2O5 and semiconductor - MnO2. The current transport in normal and reverse mode is determined by work function of niobium oxide, Nb2O5, MnO2 and band bending in interface between Nb2O5 and MnO2. The work function difference between nio

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2004

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Capacitor and Resistor Technology

ISSN

0887-7491

e-ISSN

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Volume of the periodical

2004

Issue of the periodical within the volume

24

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

141-146

UT code for WoS article

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EID of the result in the Scopus database

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