Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78583" target="_blank" >RIV/00216305:26220/08:PU78583 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics

Original language description

Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltageTa and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changesof the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decre

Czech name

Tantalum and Niobium Oxide High Voltage Capacitors:Field Crystallization and Leakage Current Kinetics

Czech description

Leakage current of Ta and NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that they are very stable at temperature below 100 C. High temperature and high voltage applications are considered to be limited by field crystallization mechanisms and ions diffusion. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in high voltageTa and NbO capacitors was performed to analyze leakage current kinetics at high temperature and high electric field. VA characteristics in normal and reverse mode in temperature range from 300 to 400 K (27 to 127 C) have been used to analyze the changesof the MIS model parameters during ageing at high temperature. There are three time intervals in leakage current changes in high electric field and at temperature T= 400 K: (i) Leakage current is stable (in some samples is slightly decre

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

CARTS EUROPE 2008

ISBN

0-7908-0121-3

ISSN

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e-ISSN

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Number of pages

10

Pages from-to

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Publisher name

Neuveden

Place of publication

Neuveden

Event location

Helsinky

Event date

Oct 20, 2008

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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