Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU90363" target="_blank" >RIV/00216305:26220/10:PU90363 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Tantalum and Niobium Oxide Capacitors: Field Crystallization, Leakage Current Kinetics and Reliability
Original language description
The study of the charge carrier transport in Ta and NbO capacitors was performed to analyze the leakage current kinetics at high temperature and high electric field for MnO2 and Conducting Polymer (CP) cathode. Leakage current of Ta and NbO capacitors atthe room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage. It was found that these capacitors are very stable for temperature below 100 C. High temperature and high voltage applications are considered to be limited bythe field crystallization mechanisms and ions diffusion. The leakage current changes in high electric field and at the elevated temperature T = 400 K could be divided into three time intervals: (i) Leakage current is stable (in some samples is slightly decreasing or increasing) during a period of 1 to 10 days. (ii) Leakage current increases with the slope 10 to100 pA/s for time interval about 10 days. (iii) Leakage current is stable or slightly increases with the slope less than 1 pA/s.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastic Phenomena in MIS and MIM Semiconductor Structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
27th International Conference on Microelectronics MIEL 2010
ISBN
978-1-4244-7200-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
MIEL
Place of publication
Niš
Event location
Niš
Event date
May 16, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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