All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Electron and Ion Transport in Tantalum Capacitors under Steady-State Bias Conditions

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU110316" target="_blank" >RIV/00216305:26220/13:PU110316 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Electron and Ion Transport in Tantalum Capacitors under Steady-State Bias Conditions

  • Original language description

    Degradation of leakage current (DCL) under steady-state bias conditions was investigated at temperature 400 K and rated voltage 35 V on samples of solid tantalum capacitors with manganese oxide cathode of three world producers. High temperature and highvoltage applications of these capacitors are considered to be limited by ions diffusion and field crystallization mechanisms [1 to 6]. Crystalline oxide starts the recrystallization at temperature above 400 K without electric field. In electric field therecrystallization of tantalum pent-oxide can start at temperature as low as 400 K. Tantalum capacitor is here considered as a Metal ? Insulator ? Semiconductor (MIS) structure. I-V characteristics in normal and reverse mode were measured for temperatures 300 and 400 K. Further, the variations of leakage current during the thermal annealing were measured with time in the presence and absence of the external electric field, and evaluated. From these experiments information was received co

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ED2.1.00%2F03.0072" target="_blank" >ED2.1.00/03.0072: Centre of sensor, information and communication systems</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    https://escies.org/webdocument/showArticle?id=984&groupid=6

  • ISBN

    978-5-7526-0597-0

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

    1-5

  • Publisher name

    Neuveden

  • Place of publication

    Noordwijk, Nizozemí

  • Event location

    Nordwijk

  • Event date

    Sep 24, 2013

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article