Electron and Ion Transport in Tantalum Capacitors under Steady-State Bias Conditions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU110316" target="_blank" >RIV/00216305:26220/13:PU110316 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Electron and Ion Transport in Tantalum Capacitors under Steady-State Bias Conditions
Original language description
Degradation of leakage current (DCL) under steady-state bias conditions was investigated at temperature 400 K and rated voltage 35 V on samples of solid tantalum capacitors with manganese oxide cathode of three world producers. High temperature and highvoltage applications of these capacitors are considered to be limited by ions diffusion and field crystallization mechanisms [1 to 6]. Crystalline oxide starts the recrystallization at temperature above 400 K without electric field. In electric field therecrystallization of tantalum pent-oxide can start at temperature as low as 400 K. Tantalum capacitor is here considered as a Metal ? Insulator ? Semiconductor (MIS) structure. I-V characteristics in normal and reverse mode were measured for temperatures 300 and 400 K. Further, the variations of leakage current during the thermal annealing were measured with time in the presence and absence of the external electric field, and evaluated. From these experiments information was received co
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED2.1.00%2F03.0072" target="_blank" >ED2.1.00/03.0072: Centre of sensor, information and communication systems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
https://escies.org/webdocument/showArticle?id=984&groupid=6
ISBN
978-5-7526-0597-0
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
1-5
Publisher name
Neuveden
Place of publication
Noordwijk, Nizozemí
Event location
Nordwijk
Event date
Sep 24, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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