Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU88344" target="_blank" >RIV/00216305:26220/10:PU88344 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics
Original language description
The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in the tested sample. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. The low temperature measurements of VA characteristics are compared for the tantalum capacitors with manganese dioxide cathode and tantalum capacitors with conducting polymer cathode. Different behavior was observed in normal mode between these two technologies. Leakage current decreases with decreasing temperature for capacitors with MnO2 cathode while for capacitors with conducting polymer cathode the le
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Electron Transport in Tantalum Nanolayers: Low Temperature Characteristics
ISBN
978-1-4244-8555-0
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
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Publisher name
IEEE Explore Digital Library
Place of publication
Berlin
Event location
Berlin
Event date
Sep 13, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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