NONDESTRUCTIVE MEASUREMENT OF TANTALUM NANOLAYERS
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU88227" target="_blank" >RIV/00216305:26220/10:PU88227 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
NONDESTRUCTIVE MEASUREMENT OF TANTALUM NANOLAYERS
Original language description
The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GD102%2F09%2FH074" target="_blank" >GD102/09/H074: Diagnostics of material defects using the latest defectoscopic methods</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
18th International Conference DISEE 2010
ISBN
978-80-227-3366-3
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Ing. M. Váry, Ph.D.
Place of publication
STU v Bratislavě
Event location
Demanovská dolina
Event date
Sep 22, 2010
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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