Solar Cell Structure Defects and Cracks

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101205" target="_blank" >RIV/00216305:26220/12:PU101205 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Solar Cell Structure Defects and Cracks

Original language description

Photon emission from the reverse biased silicon solar cell samples was used for localization of defects. Light was detected in the wavelength range 350-800 nm. Laser beam induced current technique was used for crack localization and results were correlated with light emission. Defects that emit photons with mechanism different to avalanche breakdown were investigated in microscale using scanning electron microscopy. In the most of the defective areas structure damages uncovering the pn junction have been found.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

—

Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Fracture Mechanics for Durability, Reliability and Safety

ISBN

978-5-905576-18-8

ISSN

—

e-ISSN

—

Number of pages

8

Pages from-to

507-514

Publisher name

Neuveden

Place of publication

Kazaň

Event location

Kazaň

Event date

Aug 26, 2012

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

—