The growth and dielectric properties of porous-anodic-alumina-supported nanostructured Ta2O5/Ta films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101695" target="_blank" >RIV/00216305:26220/12:PU101695 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
The growth and dielectric properties of porous-anodic-alumina-supported nanostructured Ta2O5/Ta films
Original language description
Amorphous tantalum pentoxide, grown on sintered tantalum powders or microstructured conducting substrates, has been of interest as a metal/oxide electrode with significantly increased overall surface area. Aiming at potential application to capacitors, we propose an advanced approach to fabricate Ta2O5/Ta films with highly porous nanostructured morphology and large surface-to-volume ratio via electrochemical anodizing of tantalum layers sputter-deposited over the nanoporous alumina substrates
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
CG - Electrochemistry
OECD FORD branch
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Result continuities
Project
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Continuities
R - Projekt Ramcoveho programu EK
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů