Electrical/dielectric properties of metal oxide nanostructured films synthesized by anodic oxidation of Al/Nb bilayers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101699" target="_blank" >RIV/00216305:26220/12:PU101699 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Electrical/dielectric properties of metal oxide nanostructured films synthesized by anodic oxidation of Al/Nb bilayers
Original language description
Nanocomposite niobium-aluminium oxide films and columnlike nanostructured niobium oxide films are prepared by combining anodizing, chemical etching and annealing of sputtered Al/Nb metal layers. Under appropriate formation conditions, the films show dielectric or n-type semiconductor behavior. Potential applications are as active layers for chemical sensors and dielectrics for specific capacitors
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
CG - Electrochemistry
OECD FORD branch
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Result continuities
Project
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Continuities
R - Projekt Ramcoveho programu EK
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů