Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU104338" target="_blank" >RIV/00216305:26220/12:PU104338 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Dielectric Properties of Niobium Oxide Film and Tantalum Oxide Film at Electrolytic Niobium And Tantalum Capacitors
Original language description
Complex permittivity of the niobium oxide capacitor 4.7 micro-F/ 10 Vdc and tantalum oxide 1 micro-F/ 25 Vdc was measured at room temperature at frequencies from 20 Hz to 2 MHz using the HP (Agilent) E4980A impedance analyzer, with Agilent 16034E 2-terminal test fixture for surface mounted devices (SMD). The real part of the complex permittivity for the niobium oxide capacitor at room temperature is 50 at 20Hz with one dielectric relaxation peak, which was observed at about 10 kHz. Whereas the real partof the complex permittivity for tantalum oxide capacitor at room temperature is 27 at 20Hz with one dielectric relaxation peak, which was observed at about 100 kHz. It has been shown that to be useful to use niobium and tantalum oxide capacitor below 100 kHz for measuring the dielectric properties of niobium and tantalum oxide film.
Czech name
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Czech description
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Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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