Dielectric and electric properties of tantalum thin oxide film at commercial electrolytic capacitor
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU104346" target="_blank" >RIV/00216305:26220/12:PU104346 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Dielectric and electric properties of tantalum thin oxide film at commercial electrolytic capacitor
Original language description
The complex permittivity of the tantalum oxide capacitor 100 micro-F was measured at room temperature at frequencies from 20 Hz to 2 MHz using the HP (Agilent) E4980A impedance analyzer, with Agilent 16034E 2- terminal test fixture. The tantalum oxide capacitor have max dissipation factor at 120 Hz is 0.005, the real part of the complex permittivity is 27 at 20Hz with one dielectric relaxation peak was observed at about 2 kHz. Higher breakdown fields were observed, and it has been shown that to be useful used below 100 KHz for measuring the dielectric properties of tantalum oxide film and also at electronic application where parasitic are approximately disappears.
Czech name
—
Czech description
—
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
16th International Student Conference on Electrical Engineering
ISBN
978-80-01-05043-9
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
1-4
Publisher name
CTU Prague
Place of publication
Prague
Event location
Praha, ČVUT
Event date
May 17, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
—