Formation structure properties of niobium oxide nanocolumn arrays via self organized anodization of sputter deposited aluminum on niobium layers

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F14%3APU111442" target="_blank" >RIV/00216305:26620/14:PU111442 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1039/c4tc00349g" target="_blank" >http://dx.doi.org/10.1039/c4tc00349g</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c4tc00349g" target="_blank" >10.1039/c4tc00349g</a>

Result language

angličtina

Original language name

Formation structure properties of niobium oxide nanocolumn arrays via self organized anodization of sputter deposited aluminum on niobium layers

Original language description

Nanostructured niobium oxide (NO) semiconductors are gaining increasing attention as electronic, optical, and electro-optic materials. However, the preparation of stable NO nanofilms with reproducible morphology and behavior remains a challenge. Here we show a rapid, well-controlled, and efficient way to synthesize NO films with self-organized columnlike nanostructured morphologies and advanced functional properties. The films are developed via the growth of a nanoporous anodic alumina layer, followed by the pore-directed anodization of the Nb underlayer. The columns may grow 30–150 nm wide, up to 900 nm long, with an aspect ratio of up to 20, being anchored to a thin continuous oxide layer that separates the columns from the substrate. The as-anodized films have a graded chemical composition changing from amorphous Nb2O5 mixed with Al2O3, Si-, and P-containing species in the surface region to NbO2 in the lower film layer. The post-anodization treatments result in the controlled formation of Nb2O5, NbO2, and NbO crystal phases, accompanied by transformation from nearly perfect dielectric to n-type semiconductor behavior of the films. The approach allows for the smooth film growth without early dielectric breakdown, stress-generated defects, or destructive dissolution at the respective interfaces, which is a unique situation in the oxide films on niobium. The functional properties of the NO films, revealed to date, allow for potential applications as nanocomposite capacitor dielectrics and active layers for semiconductor gas microsensors with the sensitivity to ethanol and the response to hydrogen being among best ever reported.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Project

<a href="/en/project/GA14-29531S" target="_blank" >GA14-29531S: Formation and properties of novel self-organized mixed-oxide 3-D nanostructured films for use in advanced microdevices (AnoNanoFilm)</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

JOURNAL OF MATERIALS CHEMISTRY

ISSN

0959-9428

e-ISSN

1364-5501

Volume of the periodical

2

Issue of the periodical within the volume

-

Country of publishing house

GB - UNITED KINGDOM

Number of pages

14

Pages from-to

4847-4860

UT code for WoS article

000337096300017

EID of the result in the Scopus database

2-s2.0-84901770307