Optical and Thermal Activities of Micro-Sized Local Defects on the Edges of Silicon Solar Cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU98783" target="_blank" >RIV/00216305:26220/12:PU98783 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Optical and Thermal Activities of Micro-Sized Local Defects on the Edges of Silicon Solar Cells
Original language description
The article deals with the diagnostics application to local defects on the edge in silicon solar cells by monitoring their optical and thermal activities during electrical excitation. During the measurement is solar cell connected to a voltage source inthe reverse direction. Radiation generated from reverse-biased pn junction defects is used to study local properties. It proves to be useful to measure surface radiation and to make light spots (defects) localization. By the same way is possible to measure the radiation intensity and optical spectrum.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
proceedings of the 16th conference student eeict 2012 vol. 3
ISBN
978-80-214-4462-1
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
288-292
Publisher name
LITERA Brno
Place of publication
Brno
Event location
Brno
Event date
Apr 26, 2012
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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