MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU99175" target="_blank" >RIV/00216305:26220/12:PU99175 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
MICRO-SIZED LOCAL DEFECTS ON THE EDGES OF SILICON SOLAR CELLS
Original language description
The article deals with the diagnostics application to local defects on the edge in silicon solar cells by monitoring their optical and thermal activities during electrical excitation. During the measurement is solar cell connected to a voltage source inthe reverse direction. Radiation generated from reverse-biased pn junction defects is used to study local properties. It proves to be useful to measure surface radiation and to make light spots (defects) localization. By the same way is possible to measure the radiation intensity and optical spectrum.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Electronic Devices and Systems IMAPS CS International Conference 2012
ISBN
978-80-214-4539-0
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
95-100
Publisher name
LITERA
Place of publication
Brno
Event location
Brno
Event date
Jun 28, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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