Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU99134" target="_blank" >RIV/00216305:26220/12:PU99134 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Investigation of the ion sputtering process of the (SiC)1-x(AlN)x ceramic target
Original language description
This paper describes the theoretical analysis of ion sputtering of multicomponent targets on the basis of (SiC)1-x(AlN)x. The features of ion sputtering are studied.They are connected with consideration necessity of sputtering ratio of multicomponent materials and it changes with the increasing of ion influence dose. Moreover, the effect of low metal concentrations in silicon carbide on th sputtering velocity and layer formation is also taken into account.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.
ISBN
978-80-214-4539-0
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
49-53
Publisher name
Vysoke uceni technicke v Brne
Place of publication
LITERA, Tabor 43a, 61200 Brno
Event location
Brno
Event date
Jun 28, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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