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Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU112291" target="_blank" >RIV/00216305:26220/15:PU112291 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1117/12.2069504" target="_blank" >http://dx.doi.org/10.1117/12.2069504</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1117/12.2069504" target="_blank" >10.1117/12.2069504</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Realization of microscale detection and localization of low light emitting spots in monocrystalline silicon solar cells

  • Original language description

    We report on detection and localization of imperfections in silicon solar cell bulk and surface with sub-micrometer resolution. To obtain this resolution, a family of imaging techniques including SNOM, SEM and AFM is often separately used for this purpose. In this paper we combine several of these proximal methods together, because each of them brings complimentary information about the imperfection. First, we note that SNOM images often contain distortions due to the interaction of the probe tip and sample. Therefore, we look for the possibility to circumvent this weakness and obtain more realistic images. In our experiments, we take advantage of the fact that defects or imperfections in silicon solar cell structures under reverse-bias voltage exhibit microscale low light emitting spots, and we apply an improved SNOM measurement to localize these spots. As a result, this system allows a localization and measurement of low light emission on microscale. Consequently, the size and shape of imperfections can also be determined.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Proceedings of SPIE

  • ISSN

    0277-786X

  • e-ISSN

  • Volume of the periodical

    9450

  • Issue of the periodical within the volume

    9450

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    7

  • Pages from-to

    „94501O-1“-„94501O-7“

  • UT code for WoS article

    000349404500058

  • EID of the result in the Scopus database

    2-s2.0-84923011988