Influence of Sintering Conditions on Resistance of Metallization for Silicon Solar Cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU115818" target="_blank" >RIV/00216305:26220/15:PU115818 - isvavai.cz</a>
Result on the web
<a href="http://www.nanocon.eu/files/proceedings/23/papers/4249.pdf" target="_blank" >http://www.nanocon.eu/files/proceedings/23/papers/4249.pdf</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Influence of Sintering Conditions on Resistance of Metallization for Silicon Solar Cells
Original language description
Contact formation is one of the significant steps, which have to be optimized in the production of silicon solar cells with high efficiency based on N-type substrates. In this work a comparison of the effect of various sintering conditions on the contact formation process was done. Contacts were screen printed on passivated boron doped P+ emitters using two pastes for front-side metallization from different producers. Two different temperature profiles were compared at an atmospheric concentration of O2. The influence of the O2 concentration on resistance was investigated for one profile. Resistance changes during firing were measured simultaneously with the temperature using Rapid Thermal Processes (RTP) modified to in-situ resistance measurement.
Czech name
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Czech description
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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