Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU136282" target="_blank" >RIV/00216305:26220/15:PU136282 - isvavai.cz</a>
Result on the web
<a href="https://www.atlantis-press.com/proceedings/cisia-15/22672" target="_blank" >https://www.atlantis-press.com/proceedings/cisia-15/22672</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors
Original language description
In this paper MIS (Metal-Insulator-Semiconductor) Ta2O5 capacitor has been studied in terms of dielectric relaxation with a low frequency dielectric spectroscopy. The results acquired for Ta2O5 show a relaxation peak in the temperature and frequency range available, 187 K – 385 K, 1 Hz – 10 MHz. The loss peak frequency follows the Arrhenius law dependence with the activation energy of 0.048 eV. In conductivity spectra, Ta2O5 film exhibits a steady–state value at low frequencies and a monotonous increase at high frequencies depending on temperature. The observed conductivity followed a slightly superlinear power law.
Czech name
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Czech description
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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