Characteristics of gallium arsenide solar cells at high temperature
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU123520" target="_blank" >RIV/00216305:26220/17:PU123520 - isvavai.cz</a>
Result on the web
<a href="http://www.utee.feec.vutbr.cz/eeict/2017/EEICT%202017-sborn%C3%ADk-komplet.pdf" target="_blank" >http://www.utee.feec.vutbr.cz/eeict/2017/EEICT%202017-sborn%C3%ADk-komplet.pdf</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Characteristics of gallium arsenide solar cells at high temperature
Original language description
This article reviews a work on processing of gallium arsenide (GaAs) solar cells. The performance of cells before and after 300 °C thermal processing was correlated with topography identified by optical camera, atomic force microscope (AFM) and scanning electron microscope (SEM). Experiment indicates insignificant changes in topography of GaAs solar cells, but electrical characteristics show an excellent resistance of the samples to processing temperature.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 23rd Conference STUDENT EEICT 2017
ISBN
978-80-214-5496-5
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
693-697
Publisher name
Neuveden
Place of publication
Brno
Event location
Brno
Event date
Apr 27, 2017
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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