Thermal stability of gallium arsenide solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU125832" target="_blank" >RIV/00216305:26220/17:PU125832 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2292673" target="_blank" >http://dx.doi.org/10.1117/12.2292673</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2292673" target="_blank" >10.1117/12.2292673</a>
Alternative languages
Result language
angličtina
Original language name
Thermal stability of gallium arsenide solar cells
Original language description
This article summarizes a measurement of gallium arsenide (GaAs) solar cells during their thermal processing. These solar cells compared to standard silicon cells have better efficiency and high thermal stability. However, their use is partly limited due to high acquisition costs. For these reasons, GaAs cells are deployed only in the most demanding applications where their features are needed, such as space applications. In this work, GaAs solar cells were studied in a high temperature range within 30–650 ◦ C where their functionality and changes in surface topology were monitored. These changes were recorded using an electron microscope which determined the position of the defects; using an atomic force microscope we determined the roughness of the surface and an infrared camera that showed us the thermal radiated places of the defected parts of the cell. The electrical characteristics of the cells during processing were determined by its current-voltage characteristics. Despite the occurrence of subtle changes on the solar cell with newly created surface features after 300 ◦ C thermal processing, its current-voltage characteristic remained without a significant change.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Photonics, Devices, and Systems VII
ISBN
9781510617032
ISSN
0277-786X
e-ISSN
—
Number of pages
6
Pages from-to
543-548
Publisher name
Neuveden
Place of publication
Neuveden
Event location
Praha
Event date
Aug 28, 2017
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000425429900038