Degradation analysis of GaAs solar cells at thermal stress

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU125867" target="_blank" >RIV/00216305:26220/17:PU125867 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Degradation analysis of GaAs solar cells at thermal stress
Original language description
The work focuses on the study of the stability of structure and electrical parameters of commercially available photovoltaic cells based on GaAs with Ge substrate. Solar cells of this type are used especially in adverse environments such as space applications, so their working parameters should be stable even under extreme operating conditions. Solar cells were irradiated by focused ion beam (FIB). Artificial defects with different size were created for study of dependence of characteristics on presence of micro and nano defects in structure. Afterwards original and defected solar cells by FIB were studied at different temperatures, ranging from room temperature up to 350 °C. Changes of electrical characteristics of the cells were recorded in the form of noise measurements for examination of distinctions in the pn-junction and in the form of current-voltage characteristics in light and dark for comparison of the cells performance. Infrared camera showed the thermal irradiation of the stressed and d
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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