Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU130134" target="_blank" >RIV/00216305:26220/18:PU130134 - isvavai.cz</a>
Result on the web
<a href="http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041015" target="_blank" >http://iopscience.iop.org/article/10.1088/1742-6596/1124/4/041015</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1742-6596/1124/4/041015" target="_blank" >10.1088/1742-6596/1124/4/041015</a>
Alternative languages
Result language
angličtina
Original language name
Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells
Original language description
This work aims to study the surface morphology of solar cells before and after reactive ion etching (RIE) at two different pressures. Two types of solar cell based on GaAs and polycrystalline Si were processed and compared. The Scanning Electron Microscope (SEM) with the Energy Dispersive X-ray spectroscopy (EDX) was used for analysis of the samples. Raman spectroscopy showed a structural fingerprint of materials before and after processing. Atomic Force Microscope (AFM) demonstrated dimensional topography with high resolution. Optical spectrometer detected changing of reflectance the samples. Experimentally, it has been confirmed that GaAs solar cells have a very high endurance to ion bombardment in comparison to Si cells.
Czech name
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Czech description
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Classification
Type
J<sub>SC</sub> - Article in a specialist periodical, which is included in the SCOPUS database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Physics: Conference Series
ISSN
1742-6588
e-ISSN
1742-6596
Volume of the periodical
1124
Issue of the periodical within the volume
4
Country of publishing house
GB - UNITED KINGDOM
Number of pages
6
Pages from-to
165-171
UT code for WoS article
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EID of the result in the Scopus database
2-s2.0-85060972191